Nanoscale structure of Si/SiO2/organics interfaces

Steinrück HG, Schiener A, Schindler T, Will J, Magerl A, Konovalov O, Li Destri G, Seeck O, Mezger M, Haddad J, Deutsch M, Checco A, Ocko B (2014)


Publication Language: English

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2014

Journal

Publisher: American Chemical Society

Book Volume: 8

Pages Range: 12676-12681

Journal Issue: 12

DOI: 10.1021/nn5056223

Abstract

X-ray reflectivity measurements of increasingly more complex interfaces involving silicon (001) substrates reveal the existence of a thin low-density layer intruding between the single-crystalline silicon and the amorphous native SiO terminating it. The importance of accounting for this layer in modeling silicon/liquid interfaces and silicon-supported monolayers is demonstrated by comparing fits of the measured reflectivity curves by models including and excluding this layer. The inclusion of this layer, with 6-8 missing electrons per silicon unit cell area, consistent with one missing oxygen atom whose bonds remain hydrogen passivated, is found to be particularly important for an accurate and high-resolution determination of the surface normal density profile from reflectivities spanning extended momentum transfer ranges, now measurable at modern third-generation synchrotron sources.

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How to cite

APA:

Steinrück, H.-G., Schiener, A., Schindler, T., Will, J., Magerl, A., Konovalov, O.,... Ocko, B. (2014). Nanoscale structure of Si/SiO2/organics interfaces. ACS nano, 8(12), 12676-12681. https://dx.doi.org/10.1021/nn5056223

MLA:

Steinrück, Hans-Georg, et al. "Nanoscale structure of Si/SiO2/organics interfaces." ACS nano 8.12 (2014): 12676-12681.

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