Koval Y, Chowdhury F, Jin X, Simsek Y, Lichtenberg F, Pentcheva R, Müller P (2011)
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2011
Book Volume: 208
Pages Range: 284-299
Journal Issue: 2
Resistive memory switching was investigated in titanates and niobates of the type A B O and in the high-T superconductor Bi Sr CaCu O . We studied the switching by current injection perpendicular to the layers. Both dc and pulsed measurements were performed. Out-of-plane transport properties were investigated by measurements of the resistance and current-voltage characteristics (IVs) vs. temperature for different resistive states. The critical temperature of superconducting transition and the critical current of intrinsic Josephson junctions were also analyzed for different resistive states in Bi Sr CaCu O . The resistive memory switching was explained in terms of doping of the conducting layers, which is induced by trapped charges in the insulating layers. The charged insulating layers act as a floating gate and reduce or increase the carrier concentration in the conducting layers, respectively. We found that all studied materials demonstrate a different type of non-persistent resistive switching at low temperatures. This type of switching shows up in a specific form of current-voltage characteristics with a pronounced back-bending often called s-shaped IV. Both types of resistive switching with and without memory effect were analyzed in terms of electron overheating. We examine the role of hot electrons and discuss additional factors, which might lead to persistent resistive states. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
APA:
Koval, Y., Chowdhury, F., Jin, X., Simsek, Y., Lichtenberg, F., Pentcheva, R., & Müller, P. (2011). Resistive memory switching in layered oxides: A nB nO 3n+2 perovskite derivatives and Bi 2Sr 2CaCu 2O 8+δ high-T c superconductor. physica status solidi (a), 208(2), 284-299. https://dx.doi.org/10.1002/pssa.201026757
MLA:
Koval, Yury, et al. "Resistive memory switching in layered oxides: A nB nO 3n+2 perovskite derivatives and Bi 2Sr 2CaCu 2O 8+δ high-T c superconductor." physica status solidi (a) 208.2 (2011): 284-299.
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