Resonance behavior of the defect-induced Raman mode of single-chirality enriched carbon nanotubes

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Details zur Publikation

Autor(en): Laudenbach J, Hennrich F, Telg H, Kappes M, Maultzsch J
Zeitschrift: Physical Review B
Verlag: AMER PHYSICAL SOC
Jahr der Veröffentlichung: 2013
Band: 87
Heftnummer: 16
ISSN: 1098-0121


Abstract


We present a resonance Raman study of the disorder-induced D mode in a sample highly enriched with semiconducting (9,7) single-walled carbon nanotubes in the excitation energy range of 1.49-2.05 eV. The intensity of the D mode shows a resonance behavior near the optical transition of the (9,7) tube. The well-known dispersion of the D-mode frequency, on the other hand, is not observed at the resonance, but only above a certain excitation energy. We explain our results by numerical simulations of the D-mode spectra. DOI: 10.1103/PhysRevB.87.165423



FAU-Autoren / FAU-Herausgeber

Maultzsch, Janina Prof. Dr.
Lehrstuhl für Experimentalphysik


Autor(en) der externen Einrichtung(en)
Karlsruhe Institute of Technology (KIT)
Los Alamos National Laboratory
Technische Universität Berlin


Zitierweisen

APA:
Laudenbach, J., Hennrich, F., Telg, H., Kappes, M., & Maultzsch, J. (2013). Resonance behavior of the defect-induced Raman mode of single-chirality enriched carbon nanotubes. Physical Review B, 87(16). https://dx.doi.org/10.1103/PhysRevB.87.165423

MLA:
Laudenbach, Jan, et al. "Resonance behavior of the defect-induced Raman mode of single-chirality enriched carbon nanotubes." Physical Review B 87.16 (2013).

BibTeX: 

Zuletzt aktualisiert 2018-08-08 um 10:38