Radiation hardness of graphene and MoS2 field effect devices against swift heavy ion irradiation

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Details zur Publikation

Autor(en): Ochedowski O, Marinov K, Wilbs G, Keller G, Scheuschner N, Severin D, Bender M, Maultzsch J, Tegude FJ, Schleberger M
Zeitschrift: Journal of Applied Physics
Verlag: AMER INST PHYSICS
Jahr der Veröffentlichung: 2013
Band: 113
Heftnummer: 21
ISSN: 0021-8979


Abstract


We have investigated the deterioration of field effect transistors based on two-dimensional materials due to irradiation with swift heavy ions. Devices were prepared with exfoliated single layers of MoS2 and graphene, respectively. They were characterized before and after irradiation with 1.14 GeV U28+ ions using three different fluences. By electrical characterization, atomic force microscopy, and Raman spectroscopy, we show that the irradiation leads to significant changes of structural and electrical properties. At the highest fluence of 4 x 10(11) ions/cm(2), the MoS2 transistor is destroyed, while the graphene based device remains operational, albeit with an inferior performance. (C) 2013 AIP Publishing LLC.



FAU-Autoren / FAU-Herausgeber

Maultzsch, Janina Prof. Dr.
Lehrstuhl für Experimentalphysik


Autor(en) der externen Einrichtung(en)
GSI Helmholtzzentrum für Schwerionenforschung GmbH
Technische Universität Berlin
Universität Duisburg-Essen (UDE)


Zitierweisen

APA:
Ochedowski, O., Marinov, K., Wilbs, G., Keller, G., Scheuschner, N., Severin, D.,... Schleberger, M. (2013). Radiation hardness of graphene and MoS2 field effect devices against swift heavy ion irradiation. Journal of Applied Physics, 113(21). https://dx.doi.org/10.1063/1.4808460

MLA:
Ochedowski, O., et al. "Radiation hardness of graphene and MoS2 field effect devices against swift heavy ion irradiation." Journal of Applied Physics 113.21 (2013).

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Zuletzt aktualisiert 2018-08-08 um 10:38

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