Nanoscale Imaging of InN Segregation and Polymorphism in Single Vertically Aligned InGaN/GaN Multi Quantum Well Nanorods by Tip-Enhanced Raman Scattering
Poliani E, Wagner MR, Reparaz JS, Mand M, Strassburg M, Kong X, Trampert A, Sotomayor Torres CM, Hoffmann A, Maultzsch J (2013)
Publication Status: Published
Publication Type: Journal article
Publication year: 2013
Journal
Publisher: AMER CHEMICAL SOC
Book Volume: 13
Pages Range: 3205-3212
Journal Issue: 7
DOI: 10.1021/nl401277y
Abstract
Vertically aligned GaN nanorod arrays with nonpolar InGaN/GaN multi quantum wells (MQW) were grown by MOVPE on c-plane GaN-on-sapphire templates. The chemical and structural properties of single nanorods are optically investigated with a spatial resolution beyond the diffraction limit using tip-enhanced Raman spectroscopy (TERS). This enables the local mapping of variations in the chemical composition, charge distribution, and strain in the MQW region of the nanorods. Nanoscale fluctuations of the In content in the InGaN layer of a few percent can be identified and visualized with a lateral resolution below 35 nm. We obtain evidence for the presence of indium clustering and the formation of cubic inclusions in the wurtzite matrix near the QW layers. These results are directly confirmed by high-resolution TEM images, revealing the presence of stacking faults and different polymorphs close to the surface near the MQW region. The combination of TERS and HRTEM demonstrates the potential of this nanoscale near-field imaging technique, establishing TERS as a very potent, comprehensive, and nondestructive tool for the characterization and optimization of technologically relevant semiconductor nanostructures.
Authors with CRIS profile
Involved external institutions
Technische Universität Berlin
Germany (DE)
Osram Opto Semiconductors GmbH
Germany (DE)
Paul-Drude-Institut für Festkörperelektronik - Leibniz-Institut im Forschungsverbund Berlin e.V.
Germany (DE)
Institut Català de Nanociència i Nanotecnologia (ICN2)
Spain (ES)
Germany (DE)
Osram Opto Semiconductors GmbH
Germany (DE)
Paul-Drude-Institut für Festkörperelektronik - Leibniz-Institut im Forschungsverbund Berlin e.V.
Germany (DE)
Institut Català de Nanociència i Nanotecnologia (ICN2)
Spain (ES)
How to cite
APA:
Poliani, E., Wagner, M.R., Reparaz, J.S., Mand, M., Strassburg, M., Kong, X.,... Maultzsch, J. (2013). Nanoscale Imaging of InN Segregation and Polymorphism in Single Vertically Aligned InGaN/GaN Multi Quantum Well Nanorods by Tip-Enhanced Raman Scattering. Nano Letters, 13(7), 3205-3212. https://dx.doi.org/10.1021/nl401277y
MLA:
Poliani, E., et al. "Nanoscale Imaging of InN Segregation and Polymorphism in Single Vertically Aligned InGaN/GaN Multi Quantum Well Nanorods by Tip-Enhanced Raman Scattering." Nano Letters 13.7 (2013): 3205-3212.
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