Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration

Peukert W, Meric Z, Mehringer C, Jank M, Frey L, Karpstein N (2015)

Publication Language: English

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2015

Journal

Physical Chemistry Chemical Physics Royal Society of Chemistry

Publisher: Royal Society of Chemistry

Book Volume: 17

Pages Range: 22106-22114

Journal Issue: 34

DOI: 10.1039/c5cp03321g

Abstract

In this work we demonstrate the fabrication of germanium nanoparticle (NP) based electronics. The whole process chain from the nanoparticle production up to the point of inverter integration is covered. Ge NPs with a mean diameter of 33 nm and a geometric standard deviation of 1.19 are synthesized in the gas phase by thermal decomposition of GeH4 precursor in a seeded growth process. Dispersions of these particles in ethanol are employed to fabricate thin particulate films (60 to 120 nm in thickness) on substrates with a pre-patterned interdigitated aluminum electrode structure. The effect of temperature treatment, polymethyl methacrylate encapsulation and alumina coating by plasma-assisted atomic layer deposition (employing various temperatures) on the performance of these layers as thin film transistors (TFTs) is investigated. This coating combined with thermal annealing delivers ambipolar TFTs which show an Ion/Ioff ratio in the range of 10². We report fabrication of n-type, p-type or ambipolar Ge NP TFTs at maximum temperatures of 450 °C. For the first time, a circuit using two ambipolar TFTs is demonstrated to function as a NOT gate with an inverter gain of up to 4 which can be operated at room temperature in ambient air.

Authors with CRIS profile

Wolfgang Peukert Lehrstuhl für Partikelsynthese (LFG) Zeynep Meric-Polster Lehrstuhl für Elektronische Bauelemente Christian Mehringer Lehrstuhl für Partikelsynthese (LFG) Michael Jank Lehrstuhl für Elektronische Bauelemente Lothar Frey Lehrstuhl für Elektronische Bauelemente Nicolas Karpstein Lehrstuhl für Elektronische Bauelemente

Additional Organisation(s)

Exzellenz-Cluster Engineering of Advanced Materials (EAM)

Related research project(s)

GRK 1161: Disperse systems for electronic applications - subproject electron devices in a nano-crystalline matrix (GRK 1161) GRK 1161: Disperse Systeme für Elektronikanwendungen Oct. 1, 2005 - Sept. 30, 2014

How to cite

APA:

Peukert, W., Meric, Z., Mehringer, C., Jank, M., Frey, L., & Karpstein, N. (2015). Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration. Physical Chemistry Chemical Physics, 17(34), 22106-22114. https://doi.org/10.1039/c5cp03321g

MLA:

Peukert, Wolfgang, et al. "Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration." Physical Chemistry Chemical Physics 17.34 (2015): 22106-22114.

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