INITIAL-STAGES OF EPITAXIAL COSI(2) FORMATION ON SI(100) SURFACES

Fauster T (1994)


Publication Status: Published

Publication Type: Journal article

Publication year: 1994

Journal

Publisher: American Physical Society

Book Volume: 49

Pages Range: 7535-7542

DOI: 10.1103/PhysRevB.49.7535

Abstract

The initial stages of the CoSi2 formation on Si(100) surfaces after room-temperature Co deposition and subsequent annealing were studied using Auger electron spectroscopy, low-energy electron diffraction, and valence-band and core-level photoemission spectroscopy with synchrotron radiation. CoSi2 formation does not take place at room temperature. A coverage dependence of the reaction temperature on Si(100) is observed which is attributed to a change of the Co adsorption sites at room temperature above a Co coverage of approximately 2.5 monolayer. This is related to the formation of CoSi2 grains and of pinholes. Co-rich and Si-rich CoSi2 surfaces were observed and characterized for different annealing temperatures. A Si termination of the Co-rich surface is inferred from our data. A c(4x4) reconstruction of the Si-rich surface is observed.

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How to cite

APA:

Fauster, T. (1994). INITIAL-STAGES OF EPITAXIAL COSI(2) FORMATION ON SI(100) SURFACES. Physical Review B, 49, 7535-7542. https://dx.doi.org/10.1103/PhysRevB.49.7535

MLA:

Fauster, Thomas. "INITIAL-STAGES OF EPITAXIAL COSI(2) FORMATION ON SI(100) SURFACES." Physical Review B 49 (1994): 7535-7542.

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