Image-potential-induced surface state at Si(100)

Kutschera M, Weinelt M, Rohlfing M, Fauster T (2007)

Publication Status: Published

Publication Type: Journal article

Publication year: 2007

Journal

Applied Physics A: Materials Science and Processing Springer Verlag (Germany)

Publisher: Springer Verlag (Germany)

Book Volume: 88

Pages Range: 519-526

DOI: 10.1007/s00339-007-4074-x

Abstract

We have identified a surface state on Si(100) (2x1) at a binding energy of 0.69 +/- 0.05 eV with respect to the vacuum level. Band-structure calculations within the GW method reveal that almost 80% of the probability density of the resonance is located in front of the surface. We therefore assign the surface resonance to an image-potential state. It has a lifetime of about 10 fs and contributes significantly to two-photon photoemission from Si(100).

Authors with CRIS profile

Thomas Fauster Lehrstuhl für Festkörperphysik

Involved external institutions

Freie Universität Berlin DE Germany (DE) Universität Osnabrück DE Germany (DE)

How to cite

APA:

Kutschera, M., Weinelt, M., Rohlfing, M., & Fauster, T. (2007). Image-potential-induced surface state at Si(100). Applied Physics A: Materials Science and Processing, 88, 519-526. https://dx.doi.org/10.1007/s00339-007-4074-x

MLA:

Kutschera, Michael, et al. "Image-potential-induced surface state at Si(100)." Applied Physics A: Materials Science and Processing 88 (2007): 519-526.

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