Dynamics of exciton formation at the Si(100) c(4x2) surface
Weinelt M, Kutschera M, Fauster T, Rohlfing M (2004)
Publication Status: Published
Publication Type: Journal article
Publication year: 2004
Journal
Publisher: American Physical Society
Book Volume: 92
Article Number: 126801
DOI: 10.1103/PhysRevLett.92.126801
Abstract
Carrier recombination at the Si(100) c(4x2) surface and the underlying surface electronic structure is unraveled by a combination of two-photon photoemission and many-body perturbation theory: An electron excited to the silicon conduction band by a femtosecond infrared laser pulse scatters within 220 ps to the unoccupied surface band, needs 1.5 ps to jump to the band bottom via emission of optical phonons, and finally relaxes within 5 ps with an excited hole in the occupied surface band to form an exciton living for nanoseconds.
Authors with CRIS profile
Involved external institutions
Germany (DE)How to cite
APA:
Weinelt, M., Kutschera, M., Fauster, T., & Rohlfing, M. (2004). Dynamics of exciton formation at the Si(100) c(4x2) surface. Physical Review Letters, 92. https://dx.doi.org/10.1103/PhysRevLett.92.126801
MLA:
Weinelt, Martin, et al. "Dynamics of exciton formation at the Si(100) c(4x2) surface." Physical Review Letters 92 (2004).
BibTeX: Download