Real-Time Investigations on the Formation of CuIn(S,Se)(2) While Annealing Precursors With Varying Sulfur Content

Beitrag in einer Fachzeitschrift
(Originalarbeit)


Details zur Publikation

Autorinnen und Autoren: Hölzing A, Schurr R, Jost S, Palm J, Deseler K, Hock R, Wellmann P
Zeitschrift: Materials Research Society Symposium - Proceedings
Jahr der Veröffentlichung: 2010
Band: 1165
Tagungsband: MRS Proceedings / Volume 1165 / 2009
Seitenbereich: 25-30
ISSN: 0272-9172
Sprache: Englisch


Abstract


CIS based chalcopyrite absorber materials are usually substituted in the cation and anion lattice to yield mixed pentanary crystals with the general composition Cu(In,Ga)(Se,S)(2) to achieve an optimised adaptation of the semiconductor bandgap to the terrestrial solar spectrum. Real-time investigations during the annealing of stacked elemental layers (SEL) of sputtered metals Cu and In and evaporated chalcogens S and Se with varying ratios were performed by angle-dispersive time-resolved XRD (X-ray diffraction) measurements. After qualitative phase analysis the measured powder diagrams were quantitatively analysed by the Rietveld method, the phases formed determined and their reaction kinetics obtained. Ternary indium and copper sulfoselenides form by the sulfoselenisation of the intermetallic alloy yielding different educts for the chalcopyrite formation with varying sulfur content. For S/(S+Se) >= 0.5 the formation of the chalcopyrite CuIn(S,Se)(2) is similar to the crystallisation path of CuInS(2). With increasing amount of selenium (S/(S+Se) = 0.25) different ternary sulfoselenides contribute to the semiconductor formation. For small amounts of sulfur, i.e. S/(S+Se) <= 0.1, the chalcopyrite crystallisation proceeds comparable to the one observed for sulfur-free Cu-In-Se precursors. The formation of CuIn(S,Se)(2) is accelerated and proceeds mainly after the peritectic decomposition of Cu(S,Se) to Cu(2)(S,Se). The sulfur content determines the crystallisation temperature of the semiconductor because Cu(S,Se) decomposes at higher temperatures with increasing sulfur. Upon heating S Se exchange reactions take place in the Cu-S-Se and Cu-In-S-Se system.


FAU-Autorinnen und Autoren / FAU-Herausgeberinnen und Herausgeber

Deseler, Klaus
Lehrstuhl für Werkstoffwissenschaften (Materialien der Elektronik und der Energietechnologie)
Hock, Rainer Prof. Dr.
Professur für Kristallographie und Strukturphysik
Hölzing, Astrid
Lehrstuhl für Kristallographie und Strukturphysik
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)


Zitierweisen

APA:
Hölzing, A., Schurr, R., Jost, S., Palm, J., Deseler, K., Hock, R., & Wellmann, P. (2010). Real-Time Investigations on the Formation of CuIn(S,Se)(2) While Annealing Precursors With Varying Sulfur Content. Materials Research Society Symposium - Proceedings, 1165, 25-30. https://dx.doi.org/10.1557/PROC-1165-M02-02

MLA:
Hölzing, Astrid, et al. "Real-Time Investigations on the Formation of CuIn(S,Se)(2) While Annealing Precursors With Varying Sulfur Content." Materials Research Society Symposium - Proceedings 1165 (2010): 25-30.

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Zuletzt aktualisiert 2018-09-08 um 09:38