Probing local strain and composition in Ge nanowires by means of tip-enhanced Raman scattering

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Details zur Publikation

Autor(en): Reparaz JS, Peica N, Kirste R, Goni AR, Wagner MR, Callsen G, Alonso MI, Garriga M, Marcus IC, Ronda A, Berbezier I, Maultzsch J, Thomsen C, Hoffmann A
Zeitschrift: Nanotechnology
Verlag: IOP PUBLISHING LTD
Jahr der Veröffentlichung: 2013
Band: 24
Heftnummer: 18
ISSN: 0957-4484


Abstract


Local strain and Ge content distribution in self-assembled, in-plane Ge/Si nanowires grown by combining molecular beam epitaxy and the metal-catalyst assisted-growth method were investigated by tip-enhanced Raman scattering. We show that this technique is essential to study variations of physical properties of single wires at the nanoscale, a task which cannot be achieved with conventional micro-Raman scattering. As two major findings, we report that (i) the Ge distribution in the (001) crystallographic direction is inhomogeneous, displaying a gradient with a higher Ge content close to the top surface, and (ii) in contrast, the (uncapped) wires exhibit essentially the same small residual compressive strain everywhere along the wire.



FAU-Autoren / FAU-Herausgeber

Maultzsch, Janina Prof. Dr.
Lehrstuhl für Experimentalphysik


Autor(en) der externen Einrichtung(en)
Aix-Marseille University / Aix-Marseille Université
Autonomous University of Barcelona (UAB) / Universitat Autònoma de Barcelona
Technische Universität Berlin


Zitierweisen

APA:
Reparaz, J.S., Peica, N., Kirste, R., Goni, A.R., Wagner, M.R., Callsen, G.,... Hoffmann, A. (2013). Probing local strain and composition in Ge nanowires by means of tip-enhanced Raman scattering. Nanotechnology, 24(18). https://dx.doi.org/10.1088/0957-4484/24/18/185704

MLA:
Reparaz, J. S., et al. "Probing local strain and composition in Ge nanowires by means of tip-enhanced Raman scattering." Nanotechnology 24.18 (2013).

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Zuletzt aktualisiert 2018-08-08 um 06:54