Design of a Fully Integrated Two-Stage Watt-Level Power Amplifier Using 28-nm CMOS Technology

Oßmann P, Fuhrmann J, Dufrene K, Fritzin J, Moreira J, Pretl H, Springer A (2015)

Publication Type: Journal article

Publication year: 2015

Journal

IEEE Transactions on Microwave Theory and Techniques Institute of Electrical and Electronics Engineers (IEEE)

Pages Range: 188 - 199

DOI: 10.1109/TMTT.2015.2503343

Authors with CRIS profile

Jörg Fuhrmann Lehrstuhl für Technische Elektronik

Involved external institutions

Johannes Kepler Universität (JKU) Linz AT Austria (AT) Intel GmbH DE Germany (DE)

How to cite

APA:

Oßmann, P., Fuhrmann, J., Dufrene, K., Fritzin, J., Moreira, J., Pretl, H., & Springer, A. (2015). Design of a Fully Integrated Two-Stage Watt-Level Power Amplifier Using 28-nm CMOS Technology. IEEE Transactions on Microwave Theory and Techniques, 188 - 199. https://dx.doi.org/10.1109/TMTT.2015.2503343

MLA:

Oßmann, Patrick, et al. "Design of a Fully Integrated Two-Stage Watt-Level Power Amplifier Using 28-nm CMOS Technology." IEEE Transactions on Microwave Theory and Techniques (2015): 188 - 199.

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