High-k Hafnium Silicate Films on Silicon and Germanium Wafers by MOCVD Using a Single-Source Precursor
Lemberger M, Schön F, Dirnecker T, Jank M, Paskaleva A, Bauer A, Frey L, Ryssel H (2005)
Publication Type: Book chapter / Article in edited volumes
Publication year: 2005
Publisher: The Electrochemical Society, Inc.
Edited Volumes: Proceedings of the 15th European Conference on Chemical Vapor Deposition (EUROCVD-15), Electrochemical Society
City/Town: -
Book Volume: 9
Pages Range: 873
Abstract
In this work, hafnium silicate layers for gate dielectric application in MOS capacitors deposited by MOCVD using a single-source precursor on Si as well as on Ge wafers ate investigated. For Si wafers, thermally stable Hf xSiyOz layers are obtained. In contrary, on nitrided Ge wafers nearly stoichiometric HfO2 layers are formed implying a surface dependent change in deposition kinetics. A post-deposition rapid thermal annealing in oxygen atmosphere eliminates carbon contamination and strongly improves electrical properties, e.g. reduces equivalent oxide thickness and also leakage currents by several orders of magnitude. A drawback is the observed decrease of permittivity with layer thickness which is due to a change in film composition, i.e. to increasing Si content. A pre-deposition rapid thermal nitridation process performed for Ge wafers improves J-V and C-V characteristics.
Authors with CRIS profile
Tobias Dirnecker
Lehrstuhl für Elektronische Bauelemente
Michael Jank
Lothar Frey Lehrstuhl für Elektronische Bauelemente
Lothar Frey Lehrstuhl für Elektronische Bauelemente
Involved external institutions
Germany (DE)How to cite
APA:
Lemberger, M., Schön, F., Dirnecker, T., Jank, M., Paskaleva, A., Bauer, A.,... Ryssel, H. (2005). High-k Hafnium Silicate Films on Silicon and Germanium Wafers by MOCVD Using a Single-Source Precursor. In Proceedings of the 15th European Conference on Chemical Vapor Deposition (EUROCVD-15), Electrochemical Society. (pp. 873). -: The Electrochemical Society, Inc..
MLA:
Lemberger, Martin, et al. "High-k Hafnium Silicate Films on Silicon and Germanium Wafers by MOCVD Using a Single-Source Precursor." Proceedings of the 15th European Conference on Chemical Vapor Deposition (EUROCVD-15), Electrochemical Society. -: The Electrochemical Society, Inc., 2005. 873.
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