Directional Couplers from 30 to 140 GHz in Silicon

Lämmle B, Schmalz K, Scheytt C, Kölpin A, Weigel R (2010)

Publication Type: Conference contribution

Publication year: 2010

Publisher: IEEE

Pages Range: 806-809

Conference Proceedings Title: Asia-Pacific Microwave Conference (APMC 2010)

Event location: Yokohama, Japan

ISBN: 978-1-4244-7590-2

URI: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5728463

Abstract

In this paper directional couplers with reduced size, by lumped elements, inverted microstrip, and broadside coupled lines at 61, 110, and 122 GHz center frequency and up to 156-GHz bandwidth have been designed. The couplers show an isolation up to 40 dB. Different SiGe BiCMOS technologies with 250-nm and 130-nm feature width and 5 to 7 metal layers have been used. The measurement results have been compared to simulation results and good agreement has been observed.

Authors with CRIS profile

Benjamin Lämmle Lehrstuhl für Technische Elektronik Alexander Kölpin Lehrstuhl für Technische Elektronik Robert Weigel Lehrstuhl für Technische Elektronik

How to cite

APA:

Lämmle, B., Schmalz, K., Scheytt, C., Kölpin, A., & Weigel, R. (2010). Directional Couplers from 30 to 140 GHz in Silicon. In Asia-Pacific Microwave Conference (APMC 2010) (pp. 806-809). Yokohama, Japan: IEEE.

MLA:

Lämmle, Benjamin, et al. "Directional Couplers from 30 to 140 GHz in Silicon." Proceedings of the Asia-Pacific Microwave Conference (APMC 2010), Yokohama, Japan IEEE, 2010. 806-809.

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