Sewiolo B, Fischer G, Weigel R (2009)
Publication Type: Conference contribution
Publication year: 2009
Pages Range: 1-4
Conference Proceedings Title: IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2009
Event location: San Diego, USA
DOI: 10.1109/SMIC.2009.4770545
In this paper the analysis, design and characterization of a 15 GHz power distributed amplifier for ultra-wideband radar and sensing applications are presented. The amplifier is fabricated in a low-cost 0.25 mum SiGe BiCMOS technology with a transit frequency ft of 25 GHz. The circuit integrates four common-emitter gain cells, which are capacitively coupled to the base line for power optimization. Collector line tapering has been used for efficiency improvement. 13.5 dBm output power has been measured at the 1 dB compression point (P1dB) in the desired frequency range with an associated gain of 9.5 dB and a gain flatness of plusmn0.5 dB with total power consumption of 140 mW. The peak power added efficiency (PAE) at P1dB is 13.8\%. The chip size of the compact amplifier is 1.45 mm2. Good agreement between simulation and measurement was achieved.
APA:
Sewiolo, B., Fischer, G., & Weigel, R. (2009). A 15GHz Bandwidth High Efficiency Power Distributed Amplifier for Ultra-Wideband-Applications Using a Low-Cost SiGe BiCMOS Technology. In IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2009 (pp. 1-4). San Diego, USA.
MLA:
Sewiolo, Benjamin, Georg Fischer, and Robert Weigel. "A 15GHz Bandwidth High Efficiency Power Distributed Amplifier for Ultra-Wideband-Applications Using a Low-Cost SiGe BiCMOS Technology." Proceedings of the IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2009, San Diego, USA 2009. 1-4.
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