Influence of the layer number and stacking order on out-of-plane phonons in few-layer graphene

Herziger F, Maultzsch J (2013)


Publication Status: Published

Publication Type: Journal article

Publication year: 2013

Journal

Publisher: WILEY-V C H VERLAG GMBH

Book Volume: 250

Pages Range: 2697-2701

Journal Issue: 12

DOI: 10.1002/pssb.201300313

Abstract

We investigate the stacking-order dependence of the double-resonant LO-ZO Raman combination mode, also called N mode, in ABA- and ABC-stacked trilayer graphene. By tuning the laser energy, we observe different N mode dispersions for both stackings and show that these shifts are indicative for the stacking type. We explain the different shifts with stacking-related changes in the electronic bands and the phonon dispersion. Additionally, we performed simulations of the double-resonant Raman spectra of the N mode in bilayer graphene. Our calculations predict a splitting of the N mode for laser excitation energies above 2.6eV due to different contributions from both bands. We also analyzed the subpeaks of the N mode in few-layer graphene and explain their appearance only at even numbers of graphene layers. Graphical illustration of the in-plane LO and out-of-plane ZO -point vibrations in Bernal-stacked (AB-stacked) bilayer graphene. The unit-cell atoms are highlighted in blue. The dashed vertical lines denote the unit cell atoms that are directly above each other. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

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APA:

Herziger, F., & Maultzsch, J. (2013). Influence of the layer number and stacking order on out-of-plane phonons in few-layer graphene. physica status solidi (b), 250(12), 2697-2701. https://doi.org/10.1002/pssb.201300313

MLA:

Herziger, Felix, and Janina Maultzsch. "Influence of the layer number and stacking order on out-of-plane phonons in few-layer graphene." physica status solidi (b) 250.12 (2013): 2697-2701.

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