Biber S, Schneiderbanger D, Schmidt LP (2005)
Publication Language: English
Publication Type: Conference contribution
Publication year: 2005
Publisher: Walter de Gruyter
Edited Volumes: Frequenz
Book Volume: 59
Pages Range: 141-144
Conference Proceedings Title: Frequenz, June
DOI: 10.1515/FREQ.2005.59.5-6.141
As the variety of passive circuit components for the 0.3-5 THz domain is rarely developed, we examine the possibilities to use electro-optically stimulated high resistivity float-zone silicon for the design of a tunable attenuator for quasi-optical systems operating at 580 GHz. Possible applications also include switches and modulators for millimeter and submillimeter-waves. A fiber-coupled 1W CW near infrared (MIR) diode-laser is used to illuminate a silicon slab and creates electron-hole pairs in the bulk silicon. At the operating frequency, the silicon slab acts as a Fabry-Perot resonator to minimize insertion loss due to unwanted reflections from the air-silicon interface. A second silicon slab with micromachined anti-reflection coating is used to shield the NIR to ensure safe operation. We achieve more than 35 dB dynamic range with an insertion loss of less than 0.5 dB.
APA:
Biber, S., Schneiderbanger, D., & Schmidt, L.-P. (2005). Design of a Controllable Attenuator with High Dynamic Range for THz-Frequencies based on Optically Stimulated Free Carriers in High-Resistivity Silicon. In Frequenz, June (pp. 141-144). Walter de Gruyter.
MLA:
Biber, Stephan, Dirk Schneiderbanger, and Lorenz-Peter Schmidt. "Design of a Controllable Attenuator with High Dynamic Range for THz-Frequencies based on Optically Stimulated Free Carriers in High-Resistivity Silicon." Proceedings of the Frequenz, June Walter de Gruyter, 2005. 141-144.
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