Activation and dissociation of proton-induced donor profiles in silicon

Laven JG, Job R, Hans Joachim S, Niedernostheide FJ, Schustereder W, Frey L (2013)

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2013

Journal

ECS Journal of Solid State Science and Technology Electrochemical Society

Book Volume: 2

Journal Issue: 9

DOI: 10.1149/2.028309jss

Abstract

The impact of the thermal budget on the introduction and dissociation of hydrogen-related donor profiles in high purity silicon implanted with protons in the energy range of MeV is investigated. The hydrogen-related donors are radiation-induced defect complexes decorated by the implanted hydrogen. The appearance of the donor profiles is limited to the annealing temperature regime between about 350 °C and 500 °C. The activation of the doping profiles is limited by the diffusion of the implanted hydrogen from the end-of-range region throughout the radiation-induced damage profile. This formation process is adequately described by a diffusion model with an effective activation energy of 1.2 eV. The thermal stability of the hydrogen-related donor profiles is limited by the dissociationofthe donors. The deactivationofthe dopingismodeledbytwo hydrogen-related donor species with effective dissociation energies of 2.6 eV and 3 eV. The formation and dissociation mechanisms described in the present study define the upper and lower limits of the post-implantation thermal budget, respectively, for a sensible use of proton implantation doping in crystalline silicon. © 2013 The Electrochemical Society.

Authors with CRIS profile

Lothar Frey Lehrstuhl für Elektronische Bauelemente

Involved external institutions

Infineon Technologies AG DE Germany (DE)

How to cite

APA:

Laven, J.G., Job, R., Hans Joachim, S., Niedernostheide, F.J., Schustereder, W., & Frey, L. (2013). Activation and dissociation of proton-induced donor profiles in silicon. ECS Journal of Solid State Science and Technology, 2(9). https://doi.org/10.1149/2.028309jss

MLA:

Laven, J. G., et al. "Activation and dissociation of proton-induced donor profiles in silicon." ECS Journal of Solid State Science and Technology 2.9 (2013).

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