Determination of the Electronic Energy Levels of Colloidal Nanocrystals using Field-Effect Transistors and Ab-Initio Calculations

Bisri SZ, Degoli E, Spallanzani N, Krishnan G, Kooi BJ, Ghica C, Yarema M, Heiß W, Pulci O, Ossicini S, Loi MA (2014)

Publication Status: Published

Publication Type: Journal article

Publication year: 2014

Journal

Advanced Materials Wiley-VCH Verlag

Publisher: Wiley-VCH Verlag

Book Volume: 26

Pages Range: 5639-+

Journal Issue: 32

DOI: 10.1002/adma.201400660

Abstract

Colloidal nanocrystals electronic energy levels are determined by strong size-dependent quantum confinement. Understanding the configuration of the energy levels of nanocrystal superlattices is vital in order to use them in heterostructures with other materials. A powerful method is reported to determine the energy levels of PbS nanocrystal assemblies by combining the utilization of electric-double-layer-gated transistors and advanced ab-initio theory.

Authors with CRIS profile

Wolfgang Heiß Professur für Werkstoffwissenschaften (lösungsprozessierte Halbleitermaterialien)

Involved external institutions

University of Groningen / Rijksuniversiteit Groningen NL Netherlands (NL) Università degli Studi di Modena e Reggio Emilia (UNIMORE) IT Italy (IT) Università degli Studi di Roma 'Tor Vergata' IT Italy (IT) National Institute of Materials Physics RO Romania (RO) Johannes Kepler Universität (JKU) Linz AT Austria (AT)

How to cite

APA:

Bisri, S.Z., Degoli, E., Spallanzani, N., Krishnan, G., Kooi, B.J., Ghica, C.,... Loi, M.A. (2014). Determination of the Electronic Energy Levels of Colloidal Nanocrystals using Field-Effect Transistors and Ab-Initio Calculations. Advanced Materials, 26(32), 5639-+. https://dx.doi.org/10.1002/adma.201400660

MLA:

Bisri, Satria Zulkarnaen, et al. "Determination of the Electronic Energy Levels of Colloidal Nanocrystals using Field-Effect Transistors and Ab-Initio Calculations." Advanced Materials 26.32 (2014): 5639-+.

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