Modeling the dielectric function of degenerately doped ZnO: Al thin films grown by ALD using physical parameters

Beitrag in einer Fachzeitschrift
(Originalarbeit)


Details zur Publikation

Autorinnen und Autoren: Latzel M, Göbelt M, Brönstrup G, Venzago C, Schmitt W, Sarau G, Christiansen S
Zeitschrift: Optical Materials Express
Verlag: OSA - The Optical Society
Jahr der Veröffentlichung: 2015
Band: 5
Heftnummer: 9
Seitenbereich: 1979-1990
ISSN: 2159-3930


Abstract


Transparent conductive thin films are a key building block of modern optoelectronic devices. A promising alternative to expensive indium containing oxides is aluminum doped zinc oxide (AZO). By correlating spectroscopic ellipsometry and photoluminescence, we analyzed the contributions of different optical transitions in AZO grown by atomic layer deposition to a model dielectric function (MDF) over a wide range of photon energies. The derived MDF reflects the effects of the actual band structure and therefore describes the optical properties very accurately. The presented MDF is solely based on physically meaningful parameters in contrast to empirical models like e.g. the widely used Sellmeier equation, but nevertheless real and imaginary parts are expressed as closed-form expressions. We analyzed the influence of the position of the Fermi energy and the Fermi-edge singularity to the different parts of the MDF. This information is relevant for design and simulation of optoelectronic devices and can be determined by analyzing the results from spectroscopic ellipsometry.



FAU-Autorinnen und Autoren / FAU-Herausgeberinnen und Herausgeber

Brönstrup, Gerald
Institut für Optik, Information und Photonik
Latzel, Michael
Lehrstuhl für Experimentalphysik (Optik)


Zusätzliche Organisationseinheit(en)
Graduiertenkolleg 1896/2 In situ Mikroskopie mit Elektronen, Röntgenstrahlen und Rastersonden
Exzellenz-Cluster Engineering of Advanced Materials
Interdisziplinäres Zentrum, Center for Nanoanalysis and Electron Microscopy (CENEM)


Einrichtungen weiterer Autorinnen und Autoren

Freie Universität Berlin
Helmholtz-Zentrum Berlin für Materialien und Energie (HZB)
Max-Planck-Institut für die Physik des Lichts (MPL) / Max Planck Institute for the Science of Light


Forschungsbereiche

C Photonic and Optical Materials
Exzellenz-Cluster Engineering of Advanced Materials


Zitierweisen

APA:
Latzel, M., Göbelt, M., Brönstrup, G., Venzago, C., Schmitt, W., Sarau, G., & Christiansen, S. (2015). Modeling the dielectric function of degenerately doped ZnO: Al thin films grown by ALD using physical parameters. Optical Materials Express, 5(9), 1979-1990. https://dx.doi.org/10.1364/OME.5.001979

MLA:
Latzel, Michael, et al. "Modeling the dielectric function of degenerately doped ZnO: Al thin films grown by ALD using physical parameters." Optical Materials Express 5.9 (2015): 1979-1990.

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Zuletzt aktualisiert 2019-03-06 um 16:47