Dislocation evolution and distribution during physical vapor transport (PVT) growth of bulk 6H-SiC single crystals

Sakwe A, Müller R, Masri P, Wellmann P (2006)

Publication Language: English

Publication Status: Published

Publication Type: Journal article

Publication year: 2006

Journal

Physica Status Solidi C: Conferences Wiley - V C H Verlag GmbbH & Co.

Publisher: Wiley - V C H Verlag GmbbH & Co.

Book Volume: 3

Pages Range: 562-566

Journal Issue: 3

DOI: 10.1002/pssc.200564152

Abstract

In this paper we report in a systematic way on the evolution and distribution of dislocations in PVT 6H-SiC single crystals grown under different conditions. Using KOH defect etching and optical microscopy, we have performed dislocation tracking along the crystal lengths to study their evolution and propagation mechanisms based on statistics. In particular, crystal growth experiments with continuously increased temperature during the process time have been performed to investigate the role of temperature on dislocation formation and on their annihilation behavior. We discuss dislocation evolution and distribution in this particular PVT growth process as compared to those with a constant process temperature. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Authors with CRIS profile

Peter Wellmann Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Involved external institutions

University of Montpellier / Université Montpellier FR France (FR)

How to cite

APA:

Sakwe, A., Müller, R., Masri, P., & Wellmann, P. (2006). Dislocation evolution and distribution during physical vapor transport (PVT) growth of bulk 6H-SiC single crystals. Physica Status Solidi C: Conferences, 3(3), 562-566. https://dx.doi.org/10.1002/pssc.200564152

MLA:

Sakwe, Aloysius, et al. "Dislocation evolution and distribution during physical vapor transport (PVT) growth of bulk 6H-SiC single crystals." Physica Status Solidi C: Conferences 3.3 (2006): 562-566.

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