SiC MOSFETs in hard-switching bidirectional DC/DC converters

Heckel T, Eckhardt B, März M, Frey L, Heckel T (2015)

Publication Status: Published

Publication Type: Authored book, Volume of book series

Publication year: 2015

Publisher: Trans Tech Publications Ltd

Pages Range: 689-692

ISBN: 9783038354789

DOI: 10.4028/www.scientific.net/MSF.821-823.689

Abstract

In this study, the necessity and beneficial characteristics of SiC power devices for novel power electronic applications are shown from an application point of view. The body diode properties of state of the art 1200 V SiC MOSFETs are discussed and the dependencies of switching speed are derived. Furthermore, the calculation of the fundamental efficiency limit of 99.67% at the example of a bidirectional DC/DC converter operating at 100 kHz is shown.

Authors with CRIS profile

Lothar Frey Lehrstuhl für Elektronische Bauelemente Thomas Heckel Lehrstuhl für Elektronische Bauelemente

Related research project(s)

Leistungszentrum Elektroniksysteme (LZE), Teilprojekt 2: "Robuste Gestaltung induktiver Energieüberträger für bewegte Anwendungen" Jan. 1, 2015 - June 30, 2017

How to cite

APA:

Heckel, T., Eckhardt, B., März, M., Frey, L., & Heckel, T. (2015). SiC MOSFETs in hard-switching bidirectional DC/DC converters. Trans Tech Publications Ltd.

MLA:

Heckel, Thomas, et al. SiC MOSFETs in hard-switching bidirectional DC/DC converters. Trans Tech Publications Ltd, 2015.

BibTeX: Download