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POLARON MIGRATION IN DOPED POLYSILANES - AM1 CALCULATIONS ON THE RADICAL-CATION SI-17(CH3)(36)(+)

Clark T (1995)

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Publication Status: Published

Publication Type: Journal article

Publication year: 1995

Journal

Publisher: Wiley-VCH Verlag

Book Volume: 7

Pages Range: 927-&

Journal Issue: 11

Abstract

The conductivity of bulk polysilanes is reported to occur via the migration of holes. Since there is considerable sigma delocalization along the backbone of polysilanes these materials can be considered as a one-dimensional molecular wire, the backbone being the wire and the alkyl side groups acting as the insulator. Here, quantum mechanical calculations on the polysilane model compound Si-17(CH3)(36) aimed at elucidation of the electronic properties related to electrical conductance are presented.

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How to cite

APA:

Clark, T. (1995). POLARON MIGRATION IN DOPED POLYSILANES - AM1 CALCULATIONS ON THE RADICAL-CATION SI-17(CH3)(36)(+). Advanced Materials, 7(11), 927-&.

MLA:

Clark, Timothy. "POLARON MIGRATION IN DOPED POLYSILANES - AM1 CALCULATIONS ON THE RADICAL-CATION SI-17(CH3)(36)(+)." Advanced Materials 7.11 (1995): 927-&.

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