Graphene on Si(111)7x7

Beitrag in einer Fachzeitschrift


Details zur Publikation

Autor(en): Ochedowski O, Begall G, Scheuschner N, El Kharrazi M, Maultzsch J, Schleberger M
Zeitschrift: Nanotechnology
Verlag: IOP PUBLISHING LTD
Jahr der Veröffentlichung: 2012
Band: 23
Heftnummer: 40
ISSN: 0957-4484


Abstract


We demonstrate that it is possible to mechanically exfoliate graphene under ultrahigh vacuum conditions on the atomically well defined surface of single crystalline silicon. The flakes are several hundred nanometers in lateral size and their optical contrast is very faint, in agreement with calculated data. Single-layer graphene is investigated by Raman mapping. The graphene and 2D peaks are shifted and narrowed compared to undoped graphene. With spatially resolved Kelvin probe measurements we show that this is due to p-type doping with hole densities of n(h) similar or equal to 6 x 10(12) cm(-2). The in vacuo preparation technique presented here should open up new possibilities to influence the properties of graphene by introducing adsorbates in a controlled way.



FAU-Autoren / FAU-Herausgeber

Maultzsch, Janina Prof. Dr.
Lehrstuhl für Experimentalphysik


Autor(en) der externen Einrichtung(en)
Technische Universität Berlin
Universität Duisburg-Essen (UDE)


Zitierweisen

APA:
Ochedowski, O., Begall, G., Scheuschner, N., El Kharrazi, M., Maultzsch, J., & Schleberger, M. (2012). Graphene on Si(111)7x7. Nanotechnology, 23(40). https://dx.doi.org/10.1088/0957-4484/23/40/405708

MLA:
Ochedowski, O., et al. "Graphene on Si(111)7x7." Nanotechnology 23.40 (2012).

BibTeX: 

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