Isotope-Disorder-Induced Line Broadening of Phonons in the Raman Spectra of SiC

Hundhausen M, Ley L (2001)


Publication Type: Journal article

Publication year: 2001

Journal

Publisher: American Physical Society

Book Volume: 86

Pages Range: 826

DOI: 10.1103/PhysRevLett.86.826

Abstract

The linewidth of a phonon in isotopically disordered SiC was shown to be not depending on the degree of mass disorder but on the frequency of the phonons. The elastic scattering by mass fluctuations contributed to the linewidth and the scattering rate was proportional to the density of final phonon states.

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How to cite

APA:

Hundhausen, M., & Ley, L. (2001). Isotope-Disorder-Induced Line Broadening of Phonons in the Raman Spectra of SiC. Physical Review Letters, 86, 826. https://doi.org/10.1103/PhysRevLett.86.826

MLA:

Hundhausen, Martin, and Lothar Ley. "Isotope-Disorder-Induced Line Broadening of Phonons in the Raman Spectra of SiC." Physical Review Letters 86 (2001): 826.

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