Hundhausen M, Ley L (2001)
Publication Type: Journal article
Publication year: 2001
Publisher: American Physical Society
Book Volume: 86
Pages Range: 826
DOI: 10.1103/PhysRevLett.86.826
The linewidth of a phonon in isotopically disordered SiC was shown to be not depending on the degree of mass disorder but on the frequency of the phonons. The elastic scattering by mass fluctuations contributed to the linewidth and the scattering rate was proportional to the density of final phonon states.
APA:
Hundhausen, M., & Ley, L. (2001). Isotope-Disorder-Induced Line Broadening of Phonons in the Raman Spectra of SiC. Physical Review Letters, 86, 826. https://dx.doi.org/10.1103/PhysRevLett.86.826
MLA:
Hundhausen, Martin, and Lothar Ley. "Isotope-Disorder-Induced Line Broadening of Phonons in the Raman Spectra of SiC." Physical Review Letters 86 (2001): 826.
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