Nanometer-scale field-induced oxidation if Si(111): H by a conducting-probe scanning force microscope: Doping dependence and kinetics

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Details zur Publikation

Autor(en): Hundhausen M, Ley L
Zeitschrift: Applied Physics Letters
Verlag: American Institute of Physics (AIP)
Jahr der Veröffentlichung: 1995
Band: 67
Heftnummer: 21
Seitenbereich: 3144
ISSN: 0003-6951


Abstract

Hydrogen-terminated Si(111) was patterned on the nanometer scale by field-induced oxidation using a biased conducting-probe scanning force microscope. The kinetics of oxide growth as well as its dependence on doping are investigated. Field-induced oxidation is observed for voltages exceeding a doping dependent threshold above which oxidation kinetics follows a power law.© 1995 American Institute of Physics.


FAU-Autoren / FAU-Herausgeber

Hundhausen, Martin apl. Prof. Dr.
Lehrstuhl für Laserphysik
Ley, Lothar Prof. Dr.
Naturwissenschaftliche Fakultät

Zuletzt aktualisiert 2018-08-08 um 03:47