Micro-Raman mapping on layers for crystalline silicon thin-film solar cells
Kunz T, Hessmann MT, Meidel B, Brabec C (2011)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2011
Journal
Book Volume: 314
Pages Range: 53-57
Journal Issue: 1
DOI: 10.1016/j.jcrysgro.2010.12.019
Abstract
Micro-Raman mappings have been used for characterization of our layers system developed for thin-film silicon solar cells. For the cubic SiC barrier layer a preferential orientation of the grains in 〈1 1 1〉 direction normal to the substrate was revealed. A high density of stacking faults resulted in the splitting of transversal optical (TO)-phonon modes, usually only observed in several non-cubic SiC polytypes. Within the silicon layers, which were obtained by zone melting recrystallization (ZMR) and subsequent epitaxial growth, a high residual stress of about 625 MPa was measured near the boundary towards the SiC layer. Outside of this boundary no residual stress could be detected, in spite of commonly found twin boundaries. Thus the main origin of residual stress in the silicon layers is due to the different expansion coefficients of the respective layers, while grain boundaries have no dominant effect. © 2010 Elsevier B.V. All rights reserved.
Authors with CRIS profile
Involved external institutions
Bayerisches Zentrum für Angewandte Energieforschung e.V. (ZAE Bayern)
Germany (DE)
Wacker Schott Solar GmbH
Germany (DE)
Germany (DE)
Wacker Schott Solar GmbH
Germany (DE)
How to cite
APA:
Kunz, T., Hessmann, M.T., Meidel, B., & Brabec, C. (2011). Micro-Raman mapping on layers for crystalline silicon thin-film solar cells. Journal of Crystal Growth, 314(1), 53-57. https://dx.doi.org/10.1016/j.jcrysgro.2010.12.019
MLA:
Kunz, T., et al. "Micro-Raman mapping on layers for crystalline silicon thin-film solar cells." Journal of Crystal Growth 314.1 (2011): 53-57.
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