Nickel self-diffusion in silicon-rich Si-Ni melts

Beitrag in einer Fachzeitschrift


Details zur Publikation

Autor(en): Pommrich I, Meyer A, Holland-Moritz D, Unruh T
Zeitschrift: Applied Physics Letters
Verlag: AMER INST PHYSICS
Jahr der Veröffentlichung: 2008
Band: 92
Heftnummer: 24
ISSN: 0003-6951


Abstract


The nickel self-diffusion coefficient in Si-Ni melts was measured for compositions up to 20 at. % Ni in a temperature range from 270 K below to 200 K above the liquidus temperature by using quasielastic neutron scattering in combination with electromagnetic levitation. Ni self-diffusion coefficients are in the order of 10(-8) m(2)/s, fairly independent of the Ni concentration. Diffusion coefficients calculated from viscosity data of pure liquid silicon via the Stokes-Einstein relation compare well with the Ni self-diffusion obtained here, indicating a strong correlation between the mobility of the silicon and nickel atoms. (C) 2008 American Institute of Physics.



FAU-Autoren / FAU-Herausgeber

Unruh, Tobias Prof. Dr.
Professur für Nanomaterialcharakterisierung (Streumethoden)


Autor(en) der externen Einrichtung(en)
Deutsches Zentrum für Luft- und Raumfahrt e.V. (DLR)


Zitierweisen

APA:
Pommrich, I., Meyer, A., Holland-Moritz, D., & Unruh, T. (2008). Nickel self-diffusion in silicon-rich Si-Ni melts. Applied Physics Letters, 92(24). https://dx.doi.org/10.1063/1.2947592

MLA:
Pommrich, Ines, et al. "Nickel self-diffusion in silicon-rich Si-Ni melts." Applied Physics Letters 92.24 (2008).

BibTeX: 

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