Nickel self-diffusion in silicon-rich Si-Ni melts

Pommrich I, Meyer A, Holland-Moritz D, Unruh T (2008)

Publication Status: Published

Publication Type: Journal article

Publication year: 2008

Journal

Applied Physics Letters American Institute of Physics (AIP)

Publisher: AMER INST PHYSICS

Book Volume: 92

Journal Issue: 24

DOI: 10.1063/1.2947592

Abstract

The nickel self-diffusion coefficient in Si-Ni melts was measured for compositions up to 20 at. % Ni in a temperature range from 270 K below to 200 K above the liquidus temperature by using quasielastic neutron scattering in combination with electromagnetic levitation. Ni self-diffusion coefficients are in the order of 10(-8) m(2)/s, fairly independent of the Ni concentration. Diffusion coefficients calculated from viscosity data of pure liquid silicon via the Stokes-Einstein relation compare well with the Ni self-diffusion obtained here, indicating a strong correlation between the mobility of the silicon and nickel atoms. (C) 2008 American Institute of Physics.

Authors with CRIS profile

Tobias Unruh Professur für Nanomaterialcharakterisierung (Streumethoden)

Involved external institutions

Deutsches Zentrum für Luft- und Raumfahrt e.V. (DLR) / German Aerospace Center

Germany (DE)

How to cite

APA:

Pommrich, I., Meyer, A., Holland-Moritz, D., & Unruh, T. (2008). Nickel self-diffusion in silicon-rich Si-Ni melts. Applied Physics Letters, 92(24). https://dx.doi.org/10.1063/1.2947592

MLA:

Pommrich, Ines, et al. "Nickel self-diffusion in silicon-rich Si-Ni melts." Applied Physics Letters 92.24 (2008).

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