Low-temperature solution-processed memory transistors based on zinc oxide nanoparticles

Faber H, Burkhardt M, Jedaa A, Kälblein D, Klauk H, Halik M (2009)

Publication Language: English

Publication Type: Journal article, Report

Publication year: 2009

Journal

Advanced Materials Wiley-VCH Verlag

Book Volume: 21

Pages Range: 3099 – 3104

Journal Issue: 30

URI: http://onlinelibrary.wiley.com/doi/10.1002/adma.200900440/abstract

DOI: 10.1002/adma.200900440

Abstract

We report on thin!film transistors based on ZnO nanoparticles processed from solution and with a maximum temperature of 100 °C. Electron mobilities up to 2.5 cm²V−1s−1 are obtained, and top-gate TFTs show non-volatile memory properties with a large, stable hysteresis and a memory ratio of 105. Memory TFTs operate in ambient, have good shelf-life (>6 months), and useful endurance properties.

Authors with CRIS profile

Hendrik Faber Professur für Werkstoffwissenschaften (Polymerwerkstoffe) Marcus Halik Professur für Werkstoffwissenschaften (Polymerwerkstoffe)

Additional Organisation(s)

Exzellenz-Cluster Engineering of Advanced Materials

How to cite

APA:

Faber, H., Burkhardt, M., Jedaa, A., Kälblein, D., Klauk, H., & Halik, M. (2009). Low-temperature solution-processed memory transistors based on zinc oxide nanoparticles. Advanced Materials, 21(30), 3099 – 3104. https://dx.doi.org/10.1002/adma.200900440

MLA:

Faber, Hendrik, et al. "Low-temperature solution-processed memory transistors based on zinc oxide nanoparticles." Advanced Materials 21.30 (2009): 3099 – 3104.

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