Nehring J, Nasr I, Fischer G, Weigel R, Kissinger D (2013)
Publication Type: Conference contribution
Publication year: 2013
Event location: Nürnberg
URI: http://ieeexplore.ieee.org/document/6687791/
This paper presents a single-chip octave-bandwidth signal source covering a frequency band from 15GHz to 32GHz. The circuit was fabricated in a 0.35 μm SiGe bipolar technology with an ft/fmax = 170/250GHz. An array of four crosscoupled voltage controlled oscillators with subsequent frequency ranges is implemented. The oscillator cores only draw 13mA from a 3.3V supply. Another 13mA is drawn by following buffer stages. A 4-to-1 multiplexing amplifier acts as a combiner providing the octave-wide bandwidth at a single differential output. The output power was measured to be between -2.5 dBm and 0.7 dBm. The signal source provides a good phase noise performance of -105 dBc/Hz at 15GHz and -96.8 dBc/Hz at 30GHz at an offset of 100MHz from the carrier frequencies. The overall circuit consumes a total power of 205mW and occupies a chip area of 1128 μm x 1028 μm.
APA:
Nehring, J., Nasr, I., Fischer, G., Weigel, R., & Kissinger, D. (2013). A Single-Chip 15-32 GHz Signal Source in SiGe Bipolar Technology. In Proceedings of the European Microwave Integrated Circuits Conference (EuMIC). Nürnberg.
MLA:
Nehring, Johannes, et al. "A Single-Chip 15-32 GHz Signal Source in SiGe Bipolar Technology." Proceedings of the European Microwave Integrated Circuits Conference (EuMIC), Nürnberg 2013.
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