Jakubka F, Backes C, Gannott F, Mundloch U, Hauke F, Hirsch A, Zaumseil J (2013)
Publication Language: English
Publication Type: Journal article, Original article
Publication year: 2013
Original Authors: Jakubka F., Backes C., Gannott F., Mundloch U., Hauke F., Hirsch A., Zaumseil J.
Publisher: American Chemical Society
Book Volume: 7
Pages Range: 7428-7435
Journal Issue: 8
DOI: 10.1021/nn403419d
We demonstrate random network single-walled carbon nanotube (SWNT) field-effect transistors (FETs) in bottom contact/top gate geometry with only five different semiconducting nanotube species that were selected by dispersion with poly(9,9-dioctylfluorene) in toluene. These FETs are highly ambipolar with balanced hole and electron mobilities and emit near-infrared light with narrow peak widths (<40 meV) and good efficiency. We spatially resolve the electroluminescence from the channel region during a gate voltage sweep and can thus trace charge transport paths through the SWNT thin film. A shift of emission intensity to large diameter nanotubes and gate-voltage-dependent photoluminescence quenching of the different nanotube species indicates excitation transfer within the network and preferential charge accumulation on small band gap nanotubes. Apart from applications as near-infrared emitters with selectable emission wavelengths and narrow line widths, these devices will help to understand and model charge transport in realistic carbon nanotube networks. © 2013 American Chemical Society.
APA:
Jakubka, F., Backes, C., Gannott, F., Mundloch, U., Hauke, F., Hirsch, A., & Zaumseil, J. (2013). Mapping charge transport by electroluminescence in chirality-selected carbon nanotube networks. Acs Nano, 7(8), 7428-7435. https://dx.doi.org/10.1021/nn403419d
MLA:
Jakubka, Florian, et al. "Mapping charge transport by electroluminescence in chirality-selected carbon nanotube networks." Acs Nano 7.8 (2013): 7428-7435.
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