Hundhausen M, Ley L (2003)
Publication Type: Journal article
Publication year: 2003
Publisher: Trans Tech Publications
Book Volume: 433-436
Pages Range: 325
The excitation energy dependence of the Raman scattering intensities of longitudinal modes of various SiC-polytypes was measured in the UV-spectral range for excitation energies tuned between 3.8eV and 5eV. The Raman scattering intensity of the unfolded longitudinal optical mode shows a pronounced decrease for all polytypes in the UV-spectral range, except for 3C-SiC. It is shown, that the position of the decrease in the intensity is related with the bandgap of the polytype under consideration. We explain this decreasing scattering intensity by a destructive interference of a resonant and an non-resonant contribution to the Raman scattering cross-section.
APA:
Hundhausen, M., & Ley, L. (2003). Raman excitation profiles of 3C-, 4H-, 6H-, 15R- and 21R-SiC. Materials Science Forum, 433-436, 325.
MLA:
Hundhausen, Martin, and Lothar Ley. "Raman excitation profiles of 3C-, 4H-, 6H-, 15R- and 21R-SiC." Materials Science Forum 433-436 (2003): 325.
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