Interface structure and strain state of InAs nano-clusters embedded in silicon

Beitrag in einer Fachzeitschrift


Details zur Publikation

Autorinnen und Autoren: Wu M, Trampert A, Al-Zoubi T, Benyoucef M, Reithmaier JP
Zeitschrift: Acta Materialia
Verlag: PERGAMON-ELSEVIER SCIENCE LTD
Jahr der Veröffentlichung: 2015
Band: 90
Seitenbereich: 133-139
ISSN: 1359-6454


Abstract


We present a quantitative transmission electron microscopy (TEM) study about the interface structure and strain state of buried InAs nano-clusters in Si(001) grown by molecular beam epitaxy. The nano-clusters show a typical polyhedral shape of 4-12 nm in diameter with {111} and {001} interface planes. Moire fringe analysis based on dark-field images and high-resolution (HR) TEM reveals that the nano-clusters are almost fully relaxed via the creation of misfit dislocation loops that are restricted only in the InAs/Si interface region, whereas the Si matrix is defect-free. Nevertheless, depending on the individual shape of the nano-clusters, a small amount of anisotropic residual strain in the nano-clusters is identified via strain mapping by geometric phase analysis. The scenario of mismatch stress relaxation by the formation of dislocation loops is discussed with a theoretical model based on continuum elasticity which qualitatively explains the experimental results. (C) 2015 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.







FAU-Autorinnen und Autoren / FAU-Herausgeberinnen und Herausgeber

Wu, Mingjian Dr.
Lehrstuhl für Werkstoffwissenschaften (Mikro- und Nanostrukturforschung)


Zusätzliche Organisationseinheit(en)
Interdisziplinäres Zentrum, Center for Nanoanalysis and Electron Microscopy (CENEM)


Einrichtungen weiterer Autorinnen und Autoren

Paul-Drude-Institut für Festkörperelektronik - Leibniz-Institut im Forschungsverbund Berlin e.V.
Universität Kassel


Zitierweisen

APA:
Wu, M., Trampert, A., Al-Zoubi, T., Benyoucef, M., & Reithmaier, J.P. (2015). Interface structure and strain state of InAs nano-clusters embedded in silicon. Acta Materialia, 90, 133-139. https://dx.doi.org/10.1016/j.actamat.2015.02.042

MLA:
Wu, Mingjian, et al. "Interface structure and strain state of InAs nano-clusters embedded in silicon." Acta Materialia 90 (2015): 133-139.

BibTeX: 

Zuletzt aktualisiert 2019-29-05 um 15:19