Origin of Doping in Quasi-Free-Standing Graphene on Silicon Carbide

Beitrag in einer Fachzeitschrift


Details zur Publikation

Autor(en): Ristein J, Mammadov S, Seyller T
Zeitschrift: Physical Review Letters
Verlag: American Physical Society
Jahr der Veröffentlichung: 2012
Band: 108
Seitenbereich: 246104
ISSN: 0031-9007


Abstract

We explain the robust p-type doping observed for quasi-free-standing graphene on hexagonal silicon carbide by the spontaneous polarization of the substrate. This mechanism is based on a bulk property of SiC, unavoidable for any hexagonal polytype of the material and independent of any details of the interface formation. We show that sign and magnitude of the polarization are in perfect agreement with the doping level observed in the graphene layer. With this mechanism, models based on hypothetical acceptor-type defects as they are discussed so far are obsolete. The n-type doping of epitaxial graphene is explained conventionally by donorlike states associated with the buffer layer and its interface to the substrate that overcompensate the polarization doping. © 2012 American Physical Society.


FAU-Autoren / FAU-Herausgeber

Mammadov, Samir
Lehrstuhl für Laserphysik
Ristein, Jürgen apl. Prof. Dr.
Lehrstuhl für Laserphysik
Seyller, Thomas PD Dr.
Lehrstuhl für Laserphysik


Zitierweisen

APA:
Ristein, J., Mammadov, S., & Seyller, T. (2012). Origin of Doping in Quasi-Free-Standing Graphene on Silicon Carbide. Physical Review Letters, 108, 246104. https://dx.doi.org/10.1103/PhysRevLett.108.246104

MLA:
Ristein, Jürgen, Samir Mammadov, and Thomas Seyller. "Origin of Doping in Quasi-Free-Standing Graphene on Silicon Carbide." Physical Review Letters 108 (2012): 246104.

BibTeX: 

Zuletzt aktualisiert 2018-09-08 um 16:08