Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes

Beitrag in einer Fachzeitschrift
(Originalarbeit)


Details zur Publikation

Autorinnen und Autoren: Kumar A, Heilmann M, Latzel M, Kapoor R, Sharma I, Göbelt M, Christiansen SH, Kumar V, Singh R
Zeitschrift: Scientific Reports
Verlag: Nature Publishing Group
Jahr der Veröffentlichung: 2016
Band: 6
ISSN: 2045-2322


Abstract


The electrical behaviour of Schottky barrier diodes realized on vertically standing individual GaN nanorods and array of nanorods is investigated. The Schottky diodes on individual nanorod show highest barrier height in comparison with large area diodes on nanorods array and epitaxial film which is in contrast with previously published work. The discrepancy between the electrical behaviour of nanoscale Schottky diodes and large area diodes is explained using cathodoluminescence measurements, surface potential analysis using Kelvin probe force microscopy and 1ow frequency noise measurements. The noise measurements on large area diodes on nanorods array and epitaxial film suggest the presence of barrier inhomogeneities at the metal/semiconductor interface which deviate the noise spectra from Lorentzian to 1/f type. These barrier inhomogeneities in large area diodes resulted in reduced barrier height whereas due to the limited role of barrier inhomogeneities in individual nanorod based Schottky diode, a higher barrier height is obtained.



FAU-Autorinnen und Autoren / FAU-Herausgeberinnen und Herausgeber

Heilmann, Marcus
Technische Fakultät


Zusätzliche Organisationseinheit(en)
Graduiertenkolleg 1896/2 In situ Mikroskopie mit Elektronen, Röntgenstrahlen und Rastersonden
Exzellenz-Cluster Engineering of Advanced Materials
Interdisziplinäres Zentrum, Center for Nanoanalysis and Electron Microscopy (CENEM)


Einrichtungen weiterer Autorinnen und Autoren

Indian Institute of Technology (IIT), Delhi
Max-Planck-Institut für die Physik des Lichts (MPL) / Max Planck Institute for the Science of Light


Forschungsbereiche

C Photonic and Optical Materials
Exzellenz-Cluster Engineering of Advanced Materials


Zitierweisen

APA:
Kumar, A., Heilmann, M., Latzel, M., Kapoor, R., Sharma, I., Göbelt, M.,... Singh, R. (2016). Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes. Scientific Reports, 6. https://dx.doi.org/10.1038/srep27553

MLA:
Kumar, Ashutosh, et al. "Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes." Scientific Reports 6 (2016).

BibTeX: 

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