Hydrogenation of 6H-SiC as a Surface Passivation Stable in Air

Beitrag in einer Fachzeitschrift


Details zur Publikation

Autor(en): Ristein J, Ley L
Zeitschrift: Diamond and Related Materials
Verlag: Elsevier
Jahr der Veröffentlichung: 2001
Band: 10
Seitenbereich: 1291
ISSN: 0925-9635


Abstract

We have terminated the hexagonal (0001) and (0001̄) surfaces of 6H-SiC with a monolayer of hydrogen by exposing the SiC crystal to pure hydrogen at elevated temperatures. The surfaces exhibit sharp, background-free, and unreconstructed LEED patterns and the photoemission spectra show only bulk-related Si and C components and give no indication of additional unwanted absorbates. On the Si-terminated (0001) surface, a sharp doublet at 2130 cm
-1 with a splitting of 6 cm
-1 is observed in surface-sensitive infrared spectroscopy, which is due to monohydride Si-H stretching modes. The origin of the splitting is discussed. The hydrogenated surfaces are passivated chemically and electronically. The oxygen uptake is less than 2 at.% after 2 h air exposure without any sign of Si-O or C-O bond formation. The surface Fermi level is unpinned and exhibits its bulk position on n- and p-type samples. © 2001 Elsevier Science B.V. All rights reserved.


FAU-Autoren / FAU-Herausgeber

Ley, Lothar Prof. Dr.
Naturwissenschaftliche Fakultät
Ristein, Jürgen apl. Prof. Dr.
Lehrstuhl für Laserphysik

Zuletzt aktualisiert 2018-09-08 um 06:09