Electronic and chemical passivation of hexagonal 6H-SiC surfaces by hydrogen termination

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Details zur Publikation

Autor(en): Ristein J, Ley L
Zeitschrift: Applied Physics Letters
Verlag: American Institute of Physics (AIP)
Jahr der Veröffentlichung: 2001
Band: 78
Seitenbereich: 1216
ISSN: 0003-6951


Hydrogenation of 6H-SiC (0001) and (0001̄) is achieved by high-temperature hydrogen treatment. Both surfaces show a low-energy electron diffraction pattern representative of unreconstructed surfaces of extremely high crystallographic order. On SiC(0001), hydrogenation is confirmed by the observation of sharp Si-H stretching modes. The absence of surface band bending for n-and p-type samples is indicative of electronically passivated surfaces with densities of charged surface states in the gap of below 7 × 1010 cm-2 for p-type and 1.7 × 1012 cm-2 for n-type samples, respectively. Even after two days in air, the surfaces show no sign of surface oxide in x-ray photoelectron spectroscopy. © 2001 American Institute of Physics.

FAU-Autoren / FAU-Herausgeber

Ley, Lothar Prof. Dr.
Naturwissenschaftliche Fakultät
Ristein, Jürgen apl. Prof. Dr.
Lehrstuhl für Laserphysik

Zuletzt aktualisiert 2018-09-08 um 06:09