Electronic and chemical passivation of hexagonal 6H-SiC surfaces by hydrogen termination
Beitrag in einer Fachzeitschrift
Details zur Publikation
Autorinnen und Autoren: Ristein J, Ley L
Zeitschrift: → Applied Physics Letters |
Verlag: American Institute of Physics (AIP)
Jahr der Veröffentlichung: 2001
Band: 78
Seitenbereich: 1216
ISSN: 0003-6951
Abstract
Hydrogenation of 6H-SiC (0001) and (0001̄) is achieved by high-temperature hydrogen treatment. Both surfaces show a low-energy electron diffraction pattern representative of unreconstructed surfaces of extremely high crystallographic order. On SiC(0001), hydrogenation is confirmed by the observation of sharp Si-H stretching modes. The absence of surface band bending for n-and p-type samples is indicative of electronically passivated surfaces with densities of charged surface states in the gap of below 7 × 1010 cm-2 for p-type and 1.7 × 1012 cm-2 for n-type samples, respectively. Even after two days in air, the surfaces show no sign of surface oxide in x-ray photoelectron spectroscopy. © 2001 American Institute of Physics.
FAU-Autorinnen und Autoren / FAU-Herausgeberinnen und Herausgeber
| | | Naturwissenschaftliche Fakultät |
|
| Ristein, Jürgen apl. Prof. Dr. |
| | Lehrstuhl für Laserphysik |
|