Ristein J, Maier F, Ley L (2001)
Publication Type: Journal article
Publication year: 2001
Publisher: American Physical Society
Book Volume: 64
Pages Range: 165411
The electron affinity (EA) χ of single crystal diamond (100) is determined as a function of hydrogen and oxygen coverage by a combination of work function and photoemission experiments. For the fully hydrogenated (100)-(2×1):H surface an EA of -1.3 eV and for the oxidized surface C(100)-(1×1):O χ = +1.7 eV are obtained. These are the lowest and the highest electron affinities, respectively, ever reported for any diamond surface. The variation in χ with O and H coverage is well described by a simple dipole model provided that the depolarization is properly taken into account for high adsorbate densities. This analysis favors the bridge position (etherlike) for oxygen on C(100). By mixing H and O adsorbates on a microscopic scale the EA of C(100) can be adjusted at will over 3 eV between the extreme values without jeopardizing the chemical passivation of the diamond surface afforded by H or O termination.
APA:
Ristein, J., Maier, F., & Ley, L. (2001). Electron affinity of plasma-hydrogenated and chemically oxidized diamond (100) surfaces. Physical Review B, 64, 165411.
MLA:
Ristein, Jürgen, Florian Maier, and Lothar Ley. "Electron affinity of plasma-hydrogenated and chemically oxidized diamond (100) surfaces." Physical Review B 64 (2001): 165411.
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