Design of an integrated 60 GHz cross-coupled oscillator in SiGe technology

Agethen R, Lämmle B, Fischer G, Weigel R, Kissinger D (2011)


Publication Type: Conference contribution

Publication year: 2011

Conference Proceedings Title: IEEE Semiconductor Conference Dresden

Event location: Dresden, Germany

DOI: 10.1109/SCD.2011.6068746

Abstract

This paper presents the design of an integrated fully differential 60GHz voltage controlled oscillator in SiGe technology featuring f t = 200 GHz high speed bipolar HBTs. The VCO is based on a differential Colpitts VCO. The core consumes an average amount of 26mA @ 3.3V supply voltage. The tuning bandwidth is about 12\%. The utilized buffer at the output consumes additional 64 mA @ 3.3V and provides an output power of 13dBm over the tuning bandwidth. The phase noise @ 1MHz is less than -75 dBc/Hz.

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How to cite

APA:

Agethen, R., Lämmle, B., Fischer, G., Weigel, R., & Kissinger, D. (2011). Design of an integrated 60 GHz cross-coupled oscillator in SiGe technology. In IEEE Semiconductor Conference Dresden. Dresden, Germany.

MLA:

Agethen, Roman, et al. "Design of an integrated 60 GHz cross-coupled oscillator in SiGe technology." Proceedings of the IEEE Semiconductor Conference Dresden, Dresden, Germany 2011.

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