Ultrafast dynamics in photoexcited valence-band states of Si studied by time- and angle-resolved photoemission spectroscopy of bulk direct transitions

Kanasaki J, Tanimura H, Tanimura K, Ries P, Heckel W, Biedermann K, Fauster T (2018)

Publication Language: English

Publication Type: Journal article

Publication year: 2018

Journal

Physical Review B - Condensed Matter and Materials Physics American Physical Society (APS)

Book Volume: 97

Pages Range: 035201

DOI: 10.1103/PhysRevB.97.035201

Authors with CRIS profile

Kerstin Biedermann Lehrstuhl für Festkörperphysik Thomas Fauster Lehrstuhl für Festkörperphysik

Involved external institutions

Osaka University JP Japan (JP)

How to cite

APA:

Kanasaki, J., Tanimura, H., Tanimura, K., Ries, P., Heckel, W., Biedermann, K., & Fauster, T. (2018). Ultrafast dynamics in photoexcited valence-band states of Si studied by time- and angle-resolved photoemission spectroscopy of bulk direct transitions. Physical Review B - Condensed Matter and Materials Physics, 97, 035201. https://dx.doi.org/10.1103/PhysRevB.97.035201

MLA:

Kanasaki, Junichi, et al. "Ultrafast dynamics in photoexcited valence-band states of Si studied by time- and angle-resolved photoemission spectroscopy of bulk direct transitions." Physical Review B - Condensed Matter and Materials Physics 97 (2018): 035201.

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