Ferrari M, Strunk HP, Christiansen S, Sidiki T, Chabert S, de Boer W, Sotomayor T (2000)
Publication Type: Journal article
Publication year: 2000
Publisher: Elsevier
Book Volume: 369
Pages Range: 431-435
DOI: 10.1016/S0040-6090(00)00907-X
The effect of interface potential fluctuations of a Si/SiGe multiple quantum well structure upon the low temperature exciton luminescence is studied. A possible exciton localization at such potential fluctuations, with a lateral period of 9-12 nm, is observed as a blue shift with increasing excitation power in the low temperature photoluminescence. Moreover, annealing the sample at temperatures well below the growth temperature leads to the formation of striations with a period of several micrometers along the 011 direction. To clarify whether or not a metallic decoration of misfit dislocations is needed to observe D 1-line photoluminescence (PL) emission, annealing was performed in two different ways. Only in the case of annealing in direct contact with a metal, D 1-line emission was observed in photoluminescence experiments.
APA:
Ferrari, M., Strunk, H.P., Christiansen, S., Sidiki, T., Chabert, S., de Boer, W., & Sotomayor, T. (2000). Optical and structural characterization of Si/SiGe heterostructures grown by RTCVD. Thin Solid Films, 369, 431-435. https://dx.doi.org/10.1016/S0040-6090(00)00907-X
MLA:
Ferrari, Michele, et al. "Optical and structural characterization of Si/SiGe heterostructures grown by RTCVD." Thin Solid Films 369 (2000): 431-435.
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