Fujita M, Tajima J, Nakagawa T, Abo S, Kinomura A, Pászti F, Takai M, Schork R, Frey L, Ryssel H (2002)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2002
Book Volume: 190
Pages Range: 26-33
DOI: 10.1016/S0168-583X(01)01248-4
A rapid shrinkage in the minimum feature size of integrated circuits requires analysis of dopants in their shallow source–drain and their extensions with an enhanced depth resolution. Rutherford backscattering spectroscopy (RBS) combining a medium-energy He ion beam with a detector of improved energy resolution should meet the requirement of a depth resolution better than 5 nm at a depth of 10–20 nm in the next 10 years. A toroidal electrostatic analyzer of 4×10−3 energy resolution has been used to detect the scattered ions of a medium-energy He ion beam. Five keV As+ implanted Si or SiO2 samples were measured. Depth profiling results using the above technique are compared with those of glancing-angle RBS by MeV energy He ions. Limitations in the energy resolution due to various energy-spread contributions have been clarified.
APA:
Fujita, M., Tajima, J., Nakagawa, T., Abo, S., Kinomura, A., Pászti, F.,... Ryssel, H. (2002). Development of enhanced depth-resolution technique for shallow dopant profiles. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 190, 26-33. https://dx.doi.org/10.1016/S0168-583X(01)01248-4
MLA:
Fujita, M., et al. "Development of enhanced depth-resolution technique for shallow dopant profiles." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 190 (2002): 26-33.
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