Boger K, Weinelt M, Wang J, Fauster T (2004)
Publication Status: Published
Publication Type: Journal article
Publication year: 2004
Publisher: Springer Verlag (Germany)
Book Volume: 78
Pages Range: 161-164
DOI: 10.1007/s00339-003-2312-4
With the increasing resolution and sensitivity of photoelectron spectroscopy, the influence of defects is becoming more and more obvious. Scattering processes induced by adsorbate atoms can be studied by time- and angle-resolved two-photon photoemission. We have examined the dynamics of electrons in image-potential states on the Cu(001) surface for statistically distributed Cu adatoms and have identified different scattering mechanisms. Scattering of electrons from the second (n=2) to the bottom of the first (n=1) image-potential band is observed, which we attribute to inelastic interband scattering with electrons in the bulk. At energies above the bottom of the n=2 band, resonant interband scattering from the n=2 to the n=1 image-potential band is found. The rate for these processes can be determined by modeling the time-resolved measurements via optical Bloch equations of a four-level system. Comparison of the transition and decay rates reveals that the decay rate of the n=2 electrons is almost exclusively changed by additional resonant interband-scattering processes upon adsorption.
APA:
Boger, K., Weinelt, M., Wang, J., & Fauster, T. (2004). Scattering by Cu adatoms between image-potential bands on Cu(001). Applied Physics A: Materials Science and Processing, 78, 161-164. https://dx.doi.org/10.1007/s00339-003-2312-4
MLA:
Boger, Klaus, et al. "Scattering by Cu adatoms between image-potential bands on Cu(001)." Applied Physics A: Materials Science and Processing 78 (2004): 161-164.
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