Excitation spectroscopy of photoluminescence in a-Si:H

Beitrag in einer Fachzeitschrift


Details zur Publikation

Autor(en): Ristein J
Zeitschrift: Solar Cells
Verlag: Elsevier BV
Jahr der Veröffentlichung: 1989
Band: 27
Seitenbereich: 403
ISSN: 0379-6787


Abstract

The photoluminescence (PL) excitation spectrum (intensity of PL as a function of the wavelength of the exciting light) has been measured over the range 1.0 - 1.25 eV for PL at 0.79 eV using a free electron laser (FEL) as the excitation source. At all wavelengths, the PL intensity varies with incident laser power, I, as I0.9 independent of wavelength. The resulting PL excitation spectrum has two distinguishing features, an exponential rise at lower energies followed by a leveling-off above about 1.15 eV. Although the precise functional form of the data at low energies is not uniquely determined, the data are consistent with an exponential rise whose slope is the same as that measured in optical absorption at higher energies. © 1989.


FAU-Autoren / FAU-Herausgeber

Ristein, Jürgen apl. Prof. Dr.
Lehrstuhl für Laserphysik

Zuletzt aktualisiert 2018-09-08 um 04:39