Estimation of frequency conversion efficiency of THz devices using a ballistic electron wave swing circuit model
Schildbach C, Ong DS, Hartnagel H, Schmidt LP (2016)
Publication Language: English
Publication Type: Journal article
Publication year: 2016
Journal
Publisher: Institute of Physics: Hybrid Open Access
Book Volume: 31
Pages Range: 065003
Journal Issue: 6
DOI: 10.1088/0268-1242/31/6/065003
Abstract
The ballistic electron wave swing device has previously been presented as a possible candidate for a simple power conversion technique to the THz -domain. This paper gives a simulative estimation of the power conversion efficiency. The harmonic balance simulations use an equivalent circuit model, which is also derived in this work from a mechanical model. To verify the validity of the circuit model, current waveforms are compared to Monte Carlo simulations of identical setups. Model parameters are given for a wide range of device configurations. The device configuration exhibiting the most conforming waveform is used further for determining the best conversion efficiency. The corresponding simulation setup is described. Simulation results implying a conversion efficiency of about 22% are presented.
Authors with CRIS profile
Christian Schildbach
Lehrstuhl für Hochfrequenztechnik (LHFT)
Lorenz-Peter Schmidt
Lehrstuhl für Hochfrequenztechnik (LHFT)
Involved external institutions
Malaysia (MY)
Germany (DE)How to cite
APA:
Schildbach, C., Ong, D.S., Hartnagel, H., & Schmidt, L.-P. (2016). Estimation of frequency conversion efficiency of THz devices using a ballistic electron wave swing circuit model. Semiconductor Science and Technology, 31(6), 065003. https://doi.org/10.1088/0268-1242/31/6/065003
MLA:
Schildbach, Christian, et al. "Estimation of frequency conversion efficiency of THz devices using a ballistic electron wave swing circuit model." Semiconductor Science and Technology 31.6 (2016): 065003.
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