Disappearance of the LO-Phonon line in the Raman spectrum of 6H-SiC

Hundhausen M, Ley L (2000)

Publication Type: Journal article

Publication year: 2000

Journal

Materials Science Forum Trans Tech Publications

Publisher: Trans Tech Publications

Book Volume: 338-342

Pages Range: 583

Abstract

We undertook a study of the intensities of optical vibrational modes in the Raman spectrum of 6H-SiC as a function of excitation energy between 2.4 eV and 4.9 eV. A disappearance of the LO0 mode which is the longitudinal optical mode with the highest frequency is observed at 4.38 eV. The result is explained in the framework of a bond-Raman-polarizability model for the Raman scattering cross section as due to the cancellation of the energy dependent bond-Raman polarizabilities of intra- and inter-bilayer bonds that connect the Si and C planes in SiC.

Authors with CRIS profile

Martin Hundhausen Lehrstuhl für Laserphysik Lothar Ley Naturwissenschaftliche Fakultät

How to cite

APA:

Hundhausen, M., & Ley, L. (2000). Disappearance of the LO-Phonon line in the Raman spectrum of 6H-SiC. Materials Science Forum, 338-342, 583.

MLA:

Hundhausen, Martin, and Lothar Ley. "Disappearance of the LO-Phonon line in the Raman spectrum of 6H-SiC." Materials Science Forum 338-342 (2000): 583.

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