Self-Assembled Monolayer Field-Effect Transistors based on Oligo-9,9’-dioctylfluorene Phosphonic Acids

Journal article


Publication Details

Author(s): Gothe B, de Roo T, Will J, Unruh T, Mecking S, Halik M
Journal: Nanoscale
Publication year: 2017
Volume: 9
Journal issue: 47
Pages range: 18584-18589
ISSN: 2040-3364


Abstract


The use of functional oligomers of pi-conjugated oligofluorenes led to a region-selective assembly of amorphous monolayers which exhibit robust lateral charge transport pathways in self-assembled monolayer field-effect transistors over long distances and even in mixed monolayers of semiconducting and insulating molecules. This oligomer concept might stimulate a new molecular design of self-assembling semiconducting materials.



FAU Authors / FAU Editors

Gothe, Bastian
Professur für Werkstoffwissenschaften (Polymerwerkstoffe)
Halik, Marcus Prof. Dr.
Professur für Werkstoffwissenschaften (Polymerwerkstoffe)
Unruh, Tobias Prof. Dr.
Professur für Nanomaterialcharakterisierung (Streumethoden)
Will, Johannes Dr.
Lehrstuhl für Kristallographie und Strukturphysik


Additional Organisation
Exzellenz-Cluster Engineering of Advanced Materials


External institutions
Universität Konstanz


How to cite

APA:
Gothe, B., de Roo, T., Will, J., Unruh, T., Mecking, S., & Halik, M. (2017). Self-Assembled Monolayer Field-Effect Transistors based on Oligo-9,9’-dioctylfluorene Phosphonic Acids. Nanoscale, 9(47), 18584-18589. https://dx.doi.org/10.1039/c7nr06090d

MLA:
Gothe, Bastian, et al. "Self-Assembled Monolayer Field-Effect Transistors based on Oligo-9,9’-dioctylfluorene Phosphonic Acids." Nanoscale 9.47 (2017): 18584-18589.

BibTeX: 

Last updated on 2018-30-06 at 23:23