Femtosecond transient absorption spectroscopy of silanized silicon quantum dots
Kuntermann V, Cimpean CR, Brehm G, Sauer G, Kryschi C, Wiggers H (2008)
Publication Type: Journal article, Original article
Publication year: 2008
Journal
Original Authors: Kuntermann V., Cimpean C., Brehm G., Sauer G., Kryschi C., Wiggers H.
Publisher: American Physical Society
Book Volume: 77
Article Number: 115343
Journal Issue: 11
DOI: 10.1103/PhysRevB.77.115343
Abstract
Excitonic properties of colloidal silicon quantum dots (Si qdots) with mean sizes of 4 nm were examined using stationary and time-resolved optical spectroscopy. Chemically stable silicon oxide shells were prepared by controlled surface oxidation and silanization of HF-etched Si qdots. The ultrafast relaxation dynamics of photogenerated excitons in Si qdot colloids were studied on the picosecond time scale from 0.3 ps to 2.3 ns using femtosecond-resolved transient absorption spectroscopy. The time evolution of the transient absorption spectra of the Si qdots excited with a 150 fs pump pulse at 390 nm was observed to consist of decays of various absorption transitions of photoexcited electrons in the conduction band which overlap with both the photoluminescence and the photobleaching of the valence band population density. Gaussian deconvolution of the spectroscopic data allowed for disentangling various carrier relaxation processes involving electron-phonon and phonon-phonon scatterings or arising from surface-state trapping. The initial energy and momentum relaxation of hot carriers was observed to take place via scattering by optical phonons within 0.6 ps. Exciton capturing by surface states forming shallow traps in the amorphous Si Ox shell was found to occur with a time constant of 4 ps, whereas deeper traps presumably localized in the Si-Si Ox interface gave rise to exciton trapping processes with time constants of 110 and 180 ps. Electron transfer from initially populated, higher-lying surface states to the conduction band of Si qdots (>2 nm) was observed to take place within 400 or 700 fs. © 2008 The American Physical Society.
Authors with CRIS profile
Georg Brehm
Lehrstuhl für Physikalische Chemie I
Guido Sauer
Lehrstuhl für Physikalische Chemie I
Carola Kryschi
Professur für Physikalische Chemie
Involved external institutions
Germany (DE)How to cite
APA:
Kuntermann, V., Cimpean, C.R., Brehm, G., Sauer, G., Kryschi, C., & Wiggers, H. (2008). Femtosecond transient absorption spectroscopy of silanized silicon quantum dots. Physical Review B, 77(11). https://dx.doi.org/10.1103/PhysRevB.77.115343
MLA:
Kuntermann, Volker, et al. "Femtosecond transient absorption spectroscopy of silanized silicon quantum dots." Physical Review B 77.11 (2008).
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